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Geant4 Space Users > Publications

Publications and reports

A selection of publications and reports related to the use of Geant4 in space is shown below. Please contact the site administrator if you would like a new item to be listed, or to suggest changes.



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Soft error trends and new physical model for ionizing dose effects in double gate Z-RAM cell

IEEE Trans. Nucl. Sci., Vol. 54 No 6, December 2007, 2363- 2370

N.Z. Butt et al.


Distribution of proton-induced transients in Silicon focal plane arrays

IEEE Trans. Nucl. Sci., Vol. 54 No 6, December 2007, 2444- 2449

C.L. Howe et al.


Single-Event Burnout of silicon carbide Schottky barrier diodes caused by high-energy protons

IEEE Trans. Nucl. Sci., Vol. 54 No 6, December 2007, 2379- 2383

S. Kuboyama et al.


A generalized SiGe HBT Single-Event Effects model for on-orbit event rate calculations

IEEE Trans. Nucll. Sci., Vol. 54 No 6, December 2007, 2322- 2329

J.A. Pellish et al.


Monte Carlo-based on-orbit Single Event Upset rate prediction for a radiation hardened by design latch

IEEE Trans. Nucl. Sci., Vol. 54 No 6, December 2007, 2419- 2425

K.M. Warren et al.